Novel Approach Yields 100mW Bluetooth Amplifier - AN732

ثبت نشده
چکیده

This article provides a Bluetooth® history from 1994 to the present, as well as the Ericsson® corporation's role in the system evolution. Bluetooth operates in the ISM band between 2400MHz and 2500MHz, using FHSS on 79 channels with 1MHz spacing. This article also describes how to use Bluetooth for long-range systems with 100mW output power. An example details a discrete power amplifier (PA), the MAX2240, and the supporting bias and power control circuitry. This integrated design meets its goals for performance and cost in support of class-1 long-range Bluetooth transmissions.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

CMOS LNA for BLE Applications

Bluetooth Low Energy (BLE) is an advanced technology that has been designed as complementary technology to classic Bluetooth and also it is the lowest possible power wireless technology that can be designed and built. This paper provides an overview of bluetooth low energy technology and utilization of CMOS Low Noise Amplifier (LNA) for BLE applications. The aim of this paper is review and comp...

متن کامل

Fully-integrated DECT/Bluetooth multi-band LNA in 0.18µm CMOS

The design of a multi-band low noise amplifier (LNA) is the first obstacle towards the design of a multi-standard receiver. In this paper, an approach for the design of a multi-band LNA for DECT and Bluetooth is presented. The formula for a minimal noise factor of a LNA, that takes into account the finite quality factor of the inductors is derived and the full design procedure that facilitates ...

متن کامل

A 2.4-GHz 0.18- m CMOS Self-Biased Cascode Power Amplifier

A two-stage self-biased cascode power amplifier in 0.18m CMOS process for Class-1 Bluetooth application is presented. The power amplifier provides 23-dBm output power with a power-added efficiency (PAE) of 42% at 2.4 GHz. It has a small signal gain of 38 dB and a large signal gain of 31 dB at saturation. This is the highest gain reported for a two-stage design in CMOS at the 0.8–2.4-GHz frequen...

متن کامل

A Novel and Single Chip Tri-band Low- Noise Amplifier for Wlan, Wifi and Wimax Receivers

In first stage of each microwave receiver there is Low Noise Amplifier (LNA) circuit, and this stage has important rule in quality factor of the receiver. The design of a LNA in Radio Frequency (RF) circuit requires the trade-off many importance characteristics such as gain, Noise Figure (NF), stability, power consumption and complexity. This situation forces designers to make choices in the de...

متن کامل

A fully integrated 2.45 GHz 0.25μm CMOS power amplifier

A fully integrated differential class-AB power amplifier has been designed in a 0.25um CMOS technology. It is intended for medium output power ranges such as Bluetooth class I, and has an operating frequency of 2.45GHz. By using two parallel output stages that can he switched on or off, a high efficiency can be achieved for both high and low output power levels. The simulated maximum output pow...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2009